Abstract
The feasibility of a voltage assisted unipolar switching in perpendicular magnetic tunnel junction (MTJ) has been studied using a micromagnetic simulation. Assuming a linear modulation of anisotropy field with voltage, both parallel (P) to anti-parallel (AP) and AP to P switchings were observed by application of unipolar voltage pulse without external magnetic field assistance. In latter case, the final P state can only be achieved with an ultrashort voltage pulse which vanishes before spin transfer torque (STT) becomes dominant to restore the initial AP state. In addition, it was found that the larger change in anisotropy field is required for the MTJ with smaller diameter.
Highlights
Micromagnetic simulation of electric-field-assisted magnetization switching in perpendicular magnetic tunnel junction
CoFeB/MgO-based magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy are considered to be a promising candidate to accomplishing Gbit-scale spin transfer torque magnetoresistive random access memory (STT-MRAM), due to large interfacial magnetic anisotropy and good scalability
Voltage (V, or electric field E ≡ V/d, where d is the thickness of MgO barrier) assisted unipolar switching was demonstrated in a CoFeB/MgO/CoFeB perpendicular MTJ with a diameter of 400 nm with the help of a constant external magnetic field.[2]
Summary
CoFeB/MgO-based magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy are considered to be a promising candidate to accomplishing Gbit-scale spin transfer torque magnetoresistive random access memory (STT-MRAM), due to large interfacial magnetic anisotropy and good scalability. Micromagnetic simulation of electric-field-assisted magnetization switching in perpendicular magnetic tunnel junction
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