Abstract
GaP LEC substrates doped with sulphur (ND−NA≈(3−7)×1017 cm−3) were characterized by transmission electron microscopy and chemical etching. This material was found to contain microdefects such as perfect dislocation loops, faulted loops and spherical precipitates. Cross-sectional TEM investigations have shown that perfect loops lying directly at the substrate layer interface are sources for the formation of extended dislocations propagating through the epitaxial layer. Using the methods of selective photoetching and AB-etching on (110) cleavage faces this phenomenon was observed, too.
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