Abstract
Lead-free BaZr0.25Ti0.75O3 films were grown on Pt/Ti/SiO2/Si substrates via a sol-gel method. The effects of different annealing temperatures (650–750 °C) on microstructure, dielectric and energy storage performances were systematically investigated. It was found that grain size, degree of crystallization and surface roughness of the films increased with the increasing temperature. Moderate polarization and high breakdown strength could be obtained in the film annealed at 700 °C, which not only achieved the optimal energy storage density of 60.8 J/cm3, but also exhibited good temperature stability in energy storage ranging from 20 °C to 200 °C. These results showed that BaZr0.25Ti0.75O3 films were expected to become a candidate material for lead-free energy storage capacitors.
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