Abstract
We reported a sandwich structured Pb(Zr0.4Ti0.6)O3/BaZr0.2Ti0.8O3/Pb(Zr0.4Ti0.6)O3 (PZT/BZT/PZT) film fabricated by using the sol–gel method, which was dense and uniform with a unique perovskite structure. The PZT/BZT/PZT films displayed high dielectric constants up to 1722.45 at the frequency of 10 kHz. Additionally, the enhanced energy storage density of 39.27 J·cm−3 was achieved at room temperature and 2.00 MV/cm, which was higher than that of the individual BaZr0.2Ti0.8O3 film (21.28 J·cm−3). Furthermore, the energy storage density and efficiency of PZT/BZT/PZT film increased slightly with the increasing temperature from −140 °C to 200 °C. This work proves the feasibility and effectiveness of a sandwich structure in improving dielectric, leakage, and energy storage performances, providing a new paradigm for high-energy–density dielectrics applications.
Highlights
Development of high-power and large energy–density capacitors are main requisites for fast growing compact and commercially viable electronic devices [1,2,3,4]
(111) peak of the PZT/BaZr0.2 Ti0.8 O3 (BZT)/PZT film was much higher than that of BZT films, which indicated that the compatibility between the PZT and Pt layer was better in the sandwich structured film, owing to the
(111) peak of the PZT/BZT/PZT film was much higher than that of BZT films, which indicated that the compatibility between the PZT and Pt layer was better in the sandwich structured film, owing to the reason that the Pb near the surface of the PZT films could react with the Pt electrodes, generating a new phase PbxPt1-x, and the PbxPt1-x intermetallic phase could induce the growth of PZT films in the (111)
Summary
Development of high-power and large energy–density capacitors are main requisites for fast growing compact and commercially viable electronic devices [1,2,3,4]. Liang et al prepared a BaZr0.35 Ti0.65 O3 thin film with ultrahigh energy storage density on (100) Nb:SrTiO3 (NSTO) substrates by using a high-pressure radio-frequency sputtering system [10]. BaZr0.2 Ti0.8 O3 epitaxial thin films with a large energy storage density of 30.4 J·cm−3 and high energy efficiency of 81.7%. Bao and co-workers designed BLT/PZT/BLT multilayered structure films by using a chemical solution deposition method [15] This kind of sandwich structured film could combine the individual advantages of PZT and BLT thin films, the fatigue-free characters of BLT thin films, and the good ferroelectric characters of PZT films. The structure, dielectric, leakage current, ferroelectric, and energy storage properties of the sandwich structured films were thoroughly investigated, which is critical for future materials engineering and energy applications
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