Abstract
Photocathode structures have been fabricated by means of thin microcrystalline CVD-diamond samples. Owing to the presence of structural defects in the material, metastable phenomena related to the existence of trap states within the diamond bandgap can be observed. Such effects are mainly reflected in the increase of the subgap photoemission sensitivity of the diamond film after an exposure under over bandgap ultraviolet photons (λ<225 nm). This fact suggests the use of diamond as storage medium for ultraviolet images. The possible structure of an image sensor for UV-radiation based on large area diamond film on silicon has been proposed and tested.
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