Abstract
A new avalanche photodetector is developed and realized on the basis of a Si-SiO2 microchannel structure. The new device is analogous to the well-known vacuum microchannel plates but possesses better technological characteristics. A considerable increase in the photocurrent amplification coefficient is achieved due to decreased fluctuations of the semiconductor breakdown voltage and suppressed local avalanche processes in inhomogeneities of the semiconductor responsible for the microplasma breakdown.
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