Abstract
Irradiation of MOS SRAMs (static random access memories) by energetic heavy ions results in pulses on the power lines of the device. Pulse-height analysis shows a series of peaks when the irradiation consists of identical particles incident in the same direction. Analysis through a microbeam shows that the pulses are generated by traversals of the p-n junctions making up the transistors of the device. Junctions in the memory array were found to dominate the spectrum from a CMOS device while those of the support circuitry dominate the spectrum from a DRAM (dynamic RAM). Charge collection spectra measured while the chip is irradiated by 20-MeV ions confined to a 10- mu m beam spot show the individual peaks of the CMOS SRAM spectra appearing and disappearing as the beam location spot moves across the memory cells. >
Published Version
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