Abstract
We systematically studied the micro-track profiles of ESD damaged AMR and spin valve GMR heads, and correlated these with the dynamic electric performances of each head. Spin valve GMR heads and two types of AMR heads made by different structure and material are ESD (HBM) stressed and studied. We observed a double peak in micro-track profile after more than 10% change of MR resistance. This means that the centers of AMR and GMR sensors become less sensitive before the total melting of MR element during ESD zapping. We also observed double peak micro-track profile after pin reversal of SV head. We attribute this to changes in the domain configuration caused by partial reversal of pinned layer moment along MR (GMR) stripe.
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