Abstract
Crystal of zinc-doped In0.6Se0.4 was successfully grown by direct vapour transport (DVT) method. Grown In0.6Se0.4:Zn crystal has been characterized by energy dispersive X-ray (EDAX) and powder X-ray diffractometer (XRD) techniques for compositional and micro-structural analysis, respectively. The EDAX spectra represent the grown In0.6Se0.4:Zn crystal enriched with excess indium doped with Zn, which consecutively shows enhanced n-type conductivity. The powder XRD spectrum signified that the grown sample was crystalline and had hexagonal structure. The micro-structural parameters: average crystallite size, average lattice strain, dislocation density, and domain population were determined from powder XRD spectra. The thermoelectric properties such as Seebeck coefficient (S), electrical resistivity (σ), and thermal conductivity (κ) were measured in the temperature range of 313 to 368 K. Grown In0.6Se0.4:Zn crystal reported Seebeck coefficient (S) as high as –548 μV K–1 and figure of merit of 1.14 at 368 K.
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