Abstract

In0.6Se0.4 crystals have been grown by using the Bridgman/Stockbarger method. The freshly cleaved crystals obtained from ingot have mirror-like surface. The compositional, morphological and structural properties of In0.6Se0.4 semiconductor crystals have been analysed using energy dispersive X-ray (EDAX), scanning electron microscopy (SEM) and X-ray diffractometer (XRD) techniques. It was observed from EDAX result that the ratio of weight (%) and atomic (%) of In and Se in In0.6Se0.4 crystals were 1.6 and 1.1 respectively. SEM image showed that In0.6Se0.4 crystals have smooth, homogenous and layered surface. The XRD spectra showed that obtained In0.6Se0.4 crystals had hexagonal and orthorhombic structure. The structural parameters: average crystallite size, average lattice strain, dislocation density and domain population were determined from XRD spectra.

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