Abstract
Local electronic states due to characteristic surface islands and pits formed on an atomically flat (110) GaAs interface of a quantum well fabricated by a cleaved-edge-overgrowth method with high-temperature growth-interrupt annealing are characterized by micro-photoluminescence (PL) imaging and spectroscopy. With the overall observation of the 6-nm-thick (110) quantum well with the area of 6.8-μm width and 3-mm length, we found local PL signals due to isolated 2- or 3-monolayer (ML) islands, isolated 1-ML pits, and 1-ML islands and pits formed along the cleavage atomic-step lines, and gradual change of the states across the full range of the sample.
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