Abstract

Vapor cells as the key part of chip-scale atomic clocks determine their volume stability and power consumption. Micro-fabrication, especially the cavity packaging, is challenging. In this paper, micro-fabricated rubidium vapor cells are fabricated and the Au-In TLP bonding with asymmetric metal configuration is proposed and designed to package wafer-scale cell chips at a low processing temperature of 200 °C. Tests show that the designed intermetallic compounds AuIn2 and AuIn are uniformly formed in the asymmetric TLP bonding interlayer, indicating that the bonded interlayer can endure a post-processing temperature as high as 490 °C. The TLP bonded surface exhibits shear strength of 31.68 MPa, and the upper limit for the leak rate of the sealed vapor cell is 5 × 10−10 mbar · L s–1 which remains stable after undergoing a high temperature post-treatment. Meaning the proposed Au-In TLP bonding technique is applicable at low-temperature, hermetic and reliable wafer-scale packaging for micro-fabricated alkali vapor cells.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.