Abstract

Laser micromachining is currently used in the MEMS production to replace the traditional etching process which consumes longer time to complete. The objective of this study is to investigate the drilling capability of industrial CO2 laser in processing of silicon wafer. In this work, the holes were drilled on P-type silicon wafer with thickness of 525 μm. Geometrical characteristic of holes produce, which is diameter entrance that depends on laser parameter were investigated and analyzed. Analysis of Variance (ANOVA) was used to analyze the result and generated an appropriate model for the laser drilling processing. The laser parameters involved were laser power, pulse frequency and duty cycle. The experimental results showed the entrance diameter of drilling holes was increase when the laser power and duty cycle increased. The entrance diameter of drilling hole decreases when the pulse frequency increases.

Highlights

  • Laser micromachining is currently used in the MEMS production to replace the traditional etching process which consumes longer time to complete

  • There was some form of spatter deposition at the hole entrance, which is caused by the material repelled when the laser drilling process was performed

  • From Analysis of Variance (ANOVA), the relationship between the controlled laser parameters and the hole entrance diameter can be made based on the graph generated

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Summary

Introduction

Laser micromachining is currently used in the MEMS production to replace the traditional etching process which consumes longer time to complete. Methods: In this work, the holes were drilled on P-type silicon wafer with thickness of 525 μm. Results: The laser parameters involved were laser power, pulse frequency and duty cycle. The experimental results showed the entrance diameter of drilling holes was increase when the laser power and duty cycle increased. Laser micromachining is used in the MEMS production to replace the traditional method such as the etching process which takes a longer time to finish the process. The diameter used is the smallest value of laser wavelength (1.06 μm), which makes the Nd:YAG laser beam to be adsorbed by silicon wafer, but the initial cost is expensive. Compared with CO2 laser, the processing cost for this type

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