Micro-characterisation of Si wafers by high-pressure thermopower technique

Abstract

In the present work a set of Czochralski-grown silicon wafers (Cz–Si) differently pre-treated (annealed at high temperatures in pressure medium, doped with nitrogen, implanted with high-energy hydrogen ions) has been characterised by high-pressure thermopower S technique in the phase transitions region ( 0 – 20 GPa ) . The shifts were observed in pressure of semiconductor–metal phase transition P t determined from the S ( P ) under pre-treatments. For the first time, correlation dependence has been established between high-pressure thermoelectric properties on the one hand and concentration of residual interstitial oxygen c O (which is always present in Cz–Si) on the other hand. The dependence exhibited a maximum of P t near c O ∼ 9 × 10 17 cm - 3 .