Abstract
The peculiarities of surface relief of the Si‐Sn‐Si layered films, used to produce the silicon nanocrystals with properties of quantum dots, were studied by the methods of electron and atomic force microscopy with the involvement of X‐ray fluorescent microanalysis. It was shown that the quasispherical structuring of the relief at the scale 20‐20000 nm is typical for the surface of silicon‐tin layered films. The role of layer thicknesses is experimentally analyzed under formation of the surface relief (roughness, shapes, and lateral dimensions) during their vacuum deposition from a vapor‐gas phase. The peculiarities of the relief of amorphous silicon films deposited on the surface of molten tin are shown. The fractal‐like type nanostructuring of amorphous silicon films deposited on the surface of liquid tin was discovered.
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