Abstract
We have grown undoped MgxZn1-xO films on Zn-polar ZnO substrates by using a plasma-assisted molecular beam epitaxy technique. The residual donor concentration (ND) was evaluated by capacitance–voltage measurements of the Schottky junctions formed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) films as electrodes. Increasing the Zn/O flux ratio during the growth reduced the value of ND to reach (2–7)×1014 cm-3 for MgxZn1-xO films with MgO molar fractions x ranging from 0 to 0.39. These MgxZn1-xO films with low residual ND values would be suitable host materials for p-type doping.
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