MgO Thin-Film Growth on Si(100) by Excimer Laser Ablation.

Abstract

XRD peaks showed that (100) -preferred oriented thin film grows at substrate temperature ranging from 300 to 550°C. MgO thin film with (100) orientation grew at 500°C. At 600°C the (111) peak increased markedly. The FWHM of XRD at the (100) peak decreased with increasing substrate temperature.At a substrate temperature of 300 to 550°C, (100) -preferred orientation of the crystalline state was observed. The (100) peak ratio is independent of O2 gas pressure except at high substrate temperatures. The ratio decreased with increasing O2 gas pressure at 600°C. The FWHM of XRD at the (100) peak is also independent of O2 gas pressure.We wish to thank F. Togashi of Science Univ. of Tokyo, Y. Hirabayashi and T. Watanabe for useful discussion and suggestions.