Abstract
MgB2 thin films on nontextured Al tape substrates were fabricated by electron beam evaporation. MgB2 thin film with a boron buffer layer of about 3nm thickness was also prepared. The thickness of MgB2 thin films is 250nm. The obtained MgB2 thin films on Al tape substrates were boron rich in composition and c-axis oriented. The self-field Jc of the MgB2 thin film with a boron buffer layer at 10K and 20K are 9.45×1010A/m2 and 4.85×1010A/m2, respectively. The magnetic field reduction of Jc in MgB2 thin films on Al tape substrates is smaller compared with MgB2 wires fabricated by a powder-in-tube method and MgB2 thin films fabricated by a hybrid physical chemical vapor deposition method. The field angular dependences of Jc of MgB2 thin films on Al tape substrates are similar to that of the MgB2 thin film on Si, which was reported previously. This result indicates that grain boundaries act as a dominant pinning center in MgB2 thin films on Al tape substrates.
Published Version
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