Abstract
We investigated GaN and AlGaN grown by metal organic chemical vapour deposition (MOCVD) and molecular beam epitaxy (MBE) doped with different Mg concentrations by photoluminescence Hall-effect and SIMS measurements. Optically detected magnetic resonance (ODMR) experiments were used to study the structure of the Mg-acceptors. The ODMR experiments reveal that the spin-density of the hole is equally distributed on the four nearst Nitrogen neighbors. Structural variations observed for Mg in MOCVD material are explained in terms of crystalfield variations caused by potential fluctuations due to the presence of compensating donors. Especially for highly doped MOCVD samples saturation of the free hole concentration and a strong 2.9 eV recombination are observed. Considering that compensating donors like nitrogen vacancies hydrogen and complexes of both form during growth we are able to calculate the experimental determined free hole concentrations. In MOCVD samples codoped with Mg and Si a decrease of the acceptor binding energy with increasing donor concentration was observed. The effect is caused by Coulomb interaction between the ionized acceptors and the free holes. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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