Abstract
Nonpolar a-plane (112¯0) MgxZn1−xO (a-MgxZn1−xO) films are deposited on (011¯2) r-sapphire substrates using metalorganic chemical vapor deposition with varying Mg composition (x from 0 to 0.25). Unit cell parameters with Mg composition are determined by high-resolution triple-axis x-ray diffraction. In-plane strain along the c-axis [0001] and m-axis [11¯00] in the films is anisotropic and increases with increasing Mg composition. The in-plane strain anisotropy changes with Mg composition in a-MgxZn1−xO. Calculations are carried out to determine the influence of Mg content on the residual interfacial strain.
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