Abstract
Group II-VI compound semiconductors such as CdTe can be grown epitaxially on III-V materials such as GaAs. These films possess better physical properties than their bulk-grown counterparts. This work explores the (111) CdTe/(111) GaAs system by means of MeV ion channeling. Good epitaxy is found (backscatter minimum yields of 15%) for a thickness greater than 1000 Å, which is remarkable considering the 14% lattice mismatch between film and substrate. A narrowing of the Cd angular scan suggests Cd atom displacement. A model based on Te vacancies is presented to describe our data.
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