Abstract
We performed photoluminescence (PL) and reflectance characterization of CdTe films on GaAs substrates. Separate emission peaks for heavy- and light-hole free excitons due to induced compressive strain were observed. The strain in a CdTe film is estimated to be ε=-5.28×10-4. By analyzing the PL and reflectance spectra, both heavy- and light-hole free exciton binding energies are estimated to be 9.9 meV. By analyzing the energy separation between the heavy- and light-hole free exciton reflectance dips, the magnitude of the residual compressive strain is determined to be homogeneously distributed within a CdTe film. From the CdTe film thickness dependence of heavy- and light-hole free exciton linewidths, the CdTe film quality is observed to become poor with decreasing CdTe film thickness.
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