Abstract
High energy (1–2 MeV) Fe implantation in InP was studied by means of Secondary Ions Mass Spectrometry (SIMS), Rutherford Backscattering Spectrometry (RBS) in channeling conditions, and Transmission Electron Microscopy (TEM). The investigated doses ranged from 1 × 10 13 cm −2 to 1 × 10 14 cm −2. The damage production, damage recovery and defect-dopant interactions during various annealing processes were studied. The annealing temperatures varied between 100 and 650°C. A continuous buried amorphous layer is formed for implanted doses > 3 × 10 13 cm −2. The regrowth of these amorphized layers and its influence on the Fe redistribution and defect production mechanisms during annealing has been carefully investigated.
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