Abstract
ABSTRACTUltra low-k materials used in Cu damascene process are inherently soft and weak in nature; hence the evaluation of tribological properties of these materials is an issue of paramount importance in the field of semiconductor fabrication. Chemical Mechanical Polishing (CMP) of these films is a major challenge due to their reduced modulus and cohesive strength. The objective of this research is to develop a strong understanding of the tribological properties of Cu ultra low-k dielectric materials for successful implementation in the semiconductor devices. The Cu ultra low-k systems are polished at different conditions of load and platen rotation and their polishing behavior is compared with the standard Cu-SiO2 system. The polishing behavior of Cu and the barrier Ta material is studied in order to effectively detect the end point of the Cu CMP process. Delamination studies, post process surface characterization using scanning electron microscopy and the reliability issues of these materials also come within the scope of this study.
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