Metrological parameters of semiconductor sensors of hydrogen sulfide SCS-H2S with membrane coatings based on tungsten and copper oxides

Abstract

The paper shows the possibility of using metal oxides W and Cu as a gas-sensitive material of a semiconductor hydrogen sulfide sensor. The results of studying the following metrological parameters of SCS-H2S are presented: calibration characteristic, selectivity, measurement range and basic error, the effect of pressure on the values of the input signal and the sensor’s resistance to concentration overloads. The principle of operation of the developed semiconductor hydrogen sulfide sensor is to change the electrical conductivity of the gas-sensitive layer as a result of sorption of hydrogen sulfide.