Methyl-ammonium lead iodide hybrid perovskite thin film as active material for energy conversion devices

Abstract

The use of hybrid halide Perovskites is helping us get closer to our aim of completely selfsufficient structures in terms of energy production. Preparation of a device of photoactive material CH3NH3PbI3 {FTO (Fluorine-doped tin Oxide)/ CH3NH3PbI3/SpiroOMeTAD/Al} for the photovoltaic applications has been described in this article. Producing a homogeneous thin film through the use of lower temperature, processedsolution devices with one-step spin coating processes is an essential stage in the fabrication process. To generate the thin films on the FTO-substrate, the one-step spin coating approach was utilized for the deposition of the precursor solution, which consisted of methylammonium iodide and lead iodide in a molar ratio of 3:1. This technique was employed to prepare the thin films. The FESEM technique was utilized to carry out the investigation of the surface morphology of this thin layer. In addition, the essential parameters of this device, like barrier height, saturation current, current density, ideality factor, carrier mobility, resistance, carrier lifetime, and capacitance have been computed using current-voltage (I-V) characteristics and the impedance spectroscopy technique. A laser with a power of 20 milliwatts and a wavelength of 532 nanometers was used to light the gadget. The current conduction mechanism exhibits ohmic behavior at a low voltage, while at medium voltages, TFSCLC is the mechanism that regulates charge transportation. Despite the fact that TCSCLC is demonstrated at higher voltages. The TCSCLC model was used to conduct an investigation of the hole's mobility.