INVESTIGATION OF METHYLAMMONIUM LEAD BROMIDE HYBRID PEROVSKITE BASED PHOTOACTIVE MATERIAL FOR THE PHOTOVOLTAIC APPLICATIONS

Abstract

Metal halide perovskites are bringing us closer to the goal of energy self-sufficient buildings. In this paper, we have been prepared device {FTO (Fluorine-doped tin Oxide)/CH3NH3PbBr3/Spiro-OMeTAD/Al} of by using methyl amine lead bromide base as photoactive materials for the photovoltaic applications, and then investigate the parameters involved. In order to fabricate, low-temperature solution-processed devices using one-step spin coating methods play a key role in producing uniform thin films. The spin coating technique has been used for the deposition of the precursor solution including methylammonium bromide (MABr) and lead bromide (PbBr2) with molar ratio (3:1) to prepare the thin films onto FTO-substrate. The topographical studies of the thin films prepared have been done by field emission scanning electron microscopy (FESEM). Furthermore, the required parameters of the device such as; ideality factor, barrier height, saturation current, carrier mobility, current density, resistance, capacitance and carrier lifetime have been calculated by current-voltage(I-V) characteristics and Impedance Spectroscopy technique. The device was irradiated by a laser of power 20mW functioning at wavelength of 532nm. At low voltage the current conduction mechanism displays Ohmic behavior and trap free space charge limited conduction (TFSCLC) controls the charge transport at mid voltages. While trap controlled space charge limited conduction (TCSCLC) reveals at high voltages. The hole mobility has been estimated by TCSCLC model