Abstract
The technologies of plasma-chemical etching of AlxGa1-xN epitaxial layers in chlo-rine-containing mixtures, which allow forming a microrelief on the surface of a semiconductor in the range from tens of nanometers to tens of micrometers, are presented. The modes of selective etching of GaN layers with respect to AlxGa1-xN (x = 0.25) are determined.
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