Abstract
Filamentary TiN/Ti/HfO2/W resistive switching devices were fabricated and electrically measured setting them in different resistance and degradation conditions. The TiN/Ti top electrode layer was then chemically removed by specifically selected reagents for the materials of these devices. This methodology caused the formation of plate-shaped microstructures in the W bottom metal layer. However, the HfO2 dielectric layer was not affected due to the selectivity of the etchants. Filamentary structures in the insulator layer of the devices were found in the center of these “microplates”. The top morphology and the size of the filaments were characterized by physical inspection techniques. The analysis of the results highlighted the correlation between the device electrical degradation, the resistance state and the physical nature of the filamentary path.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
