Abstract
With increasing focus on 3D integration of devices, there is an increasing demand for polishing thick silicon dioxide films. The impact of changes in the CMP pad thickness profiles on high silicon dioxide film rates and profiles are studied. A simulator was used to predict pad thickness profiles for different pad conditioning sweeps. Subsequently, these different pad conditioning sweep profiles were used to study their impact on pad thickness profiles and material removal rates (MRR) experimentally on an Applied Materials' (AMAT) 300 mm wafer Reflexion® LK polisher. The pad thickness profiles were measured using laser confocal microscopy and AMAT's state-of-the-art full pad surface metrology tool. The difference in the pad thickness values provided by all the 3 methods was <5%. It has been validated that the pad thickness profiles provided by confocal microscopy and full pad metrology measurements matches the profile predicted by the simulator.
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