Methodology and Error Analysis of Direct Resistance Measurements Used for the Quantification of Boron–Hydrogen Pairs in Crystalline Silicon

Abstract

A method for quantifying dopant–hydrogen pairs and their formation dynamics in crystalline silicon by means of directly contacted resistance measurements is presented and exemplarily validated. The method can also be applied in-situ in the temperature range where dopant–hydrogen pair formation occurs. Furthermore, the influence of different confounding factors such as a faulty assumption of doping level, unnoticed temperature variations, and unwanted illumination is quantified. It is concluded that the detection limit of dopant–hydrogen pairs of the presented method is most likely limited by unnoticed temperature fluctuations and scales with the actual dopant concentration. For crystalline silicon doped with 1016 cm−3 as it is usually used for photovoltaic applications, the detection limit is found to be below 1013 cm−3.