Abstract
The spin-transfer-torque (STT) magnetic tunneling junction (MTJ) device is one of the prominent candidates for spintronic logic circuit and neuromorphic computing. Therefore, building a simulation framework of hybrid STT-MTJ/CMOS (complementary metal–oxide–semiconductor) circuits is of great value for designing a new kind of computing paradigm based on the spintronic devices. In this work, we develop a simulation framework of hybrid STT-MTJ/CMOS circuits based on MATLAB/Simulink, which is mainly composed of a physics-based STT-MTJ model, a controlled resistor, and a current sensor. In the proposed framework, the STT-MTJ model, based on the Landau–Lifshitz–Gilbert–Slonczewsk (LLGS) equation, is implemented using the MATLAB script. The proposed simulation framework is modularized design, with the advantage of simple-to-use and easy-to-expand. To prove the effectiveness of the proposed framework, the STT-MTJ model is benchmarked with experimental results. Furthermore, the pre-charge sense amplifier (PCSA) circuit consisting of two STT-MTJ devices is validated and the electrical coupling of two spin-torque oscillators is simulated. The results demonstrate the effectiveness of our simulation framework.
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