Abstract
Before a GaAs photocathode can be activated to achieve a negative electron affinity condition, the GaAs crystal must be cleaned. This is most commonly done by ohmic, radiative, or electron bombardment heating. We report a new technique to monitor the temperature of heated GaAs photocathodes by observation with a camera. The method is robust and yields the same temperatures for different GaAs samples heated using different methods in different mounting configurations.
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