Abstract

Both cesiated and Cs O activated GaAs(100) photocathodes exposed to CO 2 have been studied with temperature programmed desorption (TPD) spectroscopy to investigate the CO 2 effect on negative electron affinity (NEA) GaAs. Most of CO 2 desorbed with Cs and O 2 at ∼ 200–250°C from the cesiated GaAs exposed to CO 2. Another peak of CO 2 desorption, with Cs, appeared at ∼ 420°C for the Cs O activated GaAs after exposure to CO 2. The appearance of the higher peak and simultaneous desorption suggest a dissociative adsorption of CO 2 on the Cs O surface layer. The results are discussed in terms of CO 2 influence on negative electron affinity (NEA) GaAs.

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