Abstract
A process for depositing CVD diamond selectively on silicon is presented. Using standard photolithography techniques, wafers are patterned with 0.6 μm resist features. Chromium is then deposited through electron beam evaporation and lifted off of the desired growth areas with acetone. After scratching with 0.5 μm diamond powder, the chrome film is etched off and diamond deposited in a hot filament CVD system. Micrographs demonstrating a high degree of selectivity and micron-scale resolution are presented. These include contiguous, single crystallite wide lines and square arrays of individual nuclei with 10 μm periodicity
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