Abstract
Tantalum and oxidized tantalum exhibit distinct differences when treated with plasma-based ion implantation of methane with − 20 kV. The implantation profiles of carbon are similar, but carbides are formed in the case of tantalum, as verified with X-ray diffraction and X-ray photoelectron spectrometry in combination with depth profiling, whereas there is no detectable carbide in the tantalum oxide film. The distributions of the co-implanted hydrogen also vary in that the intensity in depth profiling with secondary ion mass spectrometry does steadily decrease in the oxidized Ta, while in the metallic Ta it shows a short indentation below the surface and then decreases only very slowly.
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