Abstract
The annealing behaviour of high dose (10 15−10 16 cm −2) 80 keV Sb implants into (100) silicon has been investigated in detail, using transmission electron microscopy, Rutherford backscattering and channeling, 4 pt. probe (electrical) measurements and X-ray diffraction. The observed annealing behaviour of metastable Sb solid solutions is complex, involving crystal regrowth, along with several stages of diffusion and precipitation of Sb and of Si lattice defects. We speculate that Sb precipitation and relief of lattice strain is associated with movement of Si self-interstitials, which, in turn, precipitate out as visible defects.
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