Abstract

Thin films of WxSiy ( y/x=0 to 2.7) have been deposited on (100) Si and thermally grown SiO2 by reactive sputtering of tungsten in silane diluted argon plasma. The as‐deposited films with y/x<0.37 have a metastable hexagonal structure, which on annealing at 400 °C transforms to stable bcc phase. The films with y/x≥0.37 are amorphous in the as‐deposited state. Annealing of the films above 600 °C in nitrogen ambients leads to in‐matrix and interfacial transformations. The extent of these transformations, as monitored by x‐ray diffraction, is decided by the thermodynamic stability of W–Si compounds and the availability of silicon at the film–substrate interface. The extent of bulk and interfacial reactions on isothermal annealing of the films up to 1000 °C has been studied.

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