Abstract
The effects of well shapes and waveguide materials on InP-based InAs quantum well lasers have been investigated. The laser structures were grown on metamorphic In0.65Al0.35As buffers. A novel trapezoidal quantum well composed of InyGa1−yAs grading and InAs layer was used to improve the quality of quantum well. Quaternary In0.65Al0.2Ga0.15As waveguide was applied instead of ternary In0.65Ga0.35As to enhance the carrier injection. The material qualities have been characterized by X-ray diffraction, transmission electron microscopy and photoluminescence measurements, while the device properties of the lasers with various structures were investigated at different temperatures. Results show that the laser performances have been improved by the use of trapezoidal quantum wells and InAlGaAs waveguides.
Published Version
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