Abstract
We report the RF performance of 0.12 μm T-gate GaAs based metamorphic HEMTs with a composite In0.53Ga0.47As/In0.30Ga0.70As channel. 2×50 μm wide devices demonstrated an fT of 200 GHz, the highest of any three terminal GaAs based device reported to date. In addition, 2×25 μm devices demonstrated 9.0 dB MAG at 94 GHz showing the W-band capability of GaAs based metamorphic HEMTs. (5 pages)
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