Abstract
An interesting In0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistor with non-annealed ohmic-recess (NAOR) technique is fabricated and studied. Experimentally, the parasitic resistance is substantially reduced. The used NAOR technique shows benefits of the absence of thermal treatment (non-annealed) for ohmic contact. Compared with the traditional structure, both the DC and the RF performance is significantly improved. From experimental results, the studied 1 µm gate length with NAOR technique exhibits breakdown voltage of 22.93 (16.89) V, drain saturation current of 327 (299) mA/mm and parasitic resistance of 1.67 (2.02) Ω · mm at 300 (500) K. The unity current gain cutoff frequency fT and maximum oscillation frequency fmax are 20.5 and 62.3 GHz at 300 K.
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