Abstract
Metal-organic vapor-phase epitaxy (MOVPE) growth of InP was investigated by using both triethylphosphine (TEP) and phosphine (PH/sub 3/) simultaneously as phosphorus sources. Excellent surface morphology was obtained at 630 and 660/spl deg/C by using both TEP and phosphine simultaneously at an optimized balance even though the phosphine supply amount was drastically reduced. The regular monolayer-step array of the sample surface indicates the enhancement of step-flow growth attributed to the enhancement of phosphorus source supply. By using this method, we obtained the InP recess-etching stopper layers of InP-based high electron mobility transistors (HEMTs) with excellent etching selectivity. Low-temperature InP growth at 475/spl deg/C and below was also examined for the growth of emitter in InP-based heterojunction bipolar transistors (HBTs). It is confirmed that this growth method is quite effective for the improvement of InP crystal quality of InP-based epiwafers and the cost reduction for epiwafer production.
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