Abstract
We have grown 30-stage AlInAs-GaInAs quantum cascade laser structures by low-pressure metalorganic vapor-phase epitaxy (MOVPE). The growth rate for the active region was set very low (0.1 nm/s), and growth stops were employed at all interfaces. The devices were operated pulsed at room temperature, with a threshold current density of 2.8 kA/cm 2, a lasing wavelength of 7.6 μm, and a peak power of 150 mW. CW operation was achieved up to a temperature of 180 K. These characteristics compare favorably with MBE-grown QC lasers of similar structure.
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