Abstract
We describe metalorganic vapor-phase epitaxy (MOVPE) growth of InGaAsP multiple-quantum-well (MQW) distributed feedback (DFB) lasers. The MQWs and optical guide layers were grown directly on a corrugated InP substrate, whose corrugation was preserved by a layer pregrown in a mixed arsine and triethylgallium flow at 350°C. Before the pregrowth, only hydrogen flowed over the corrugated InP substrate. The corrugated InP substrate with the pregrowth layer was heated to 650°C in an arsine ambient, then an InGaAsP waveguide layer and MQW layers were grown. The pregrowth layer was confirmed to be InGaAsP, enabling us to grow a thin InGaAsP waveguide layer to realize small optical confinement inside the MQW active layers. A fabricated laser diode operating at 1.62 μm showed a threshold current of 10.2 mA and an external quantum efficiency of 0.28 mW/mA at an ambient temperature of 25°C. A side longitudinal mode suppression ratio of 40 dB at an optical output power of 10 mW was obtained, in the range from −20 to 85°C.
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