Abstract
A gain-levered multiple quantum well (MQW) distributed feedback (DFB) laser with high FM efficiency is discussed. The device consists of three sections with different bandgap energy. It can be fabricated by a selective area metalorganic vapor phase epitaxy (MOVPE) growth technique. Numerical analysis shows that a flat, red-shifted, and high FM efficiency of above 1 GHz/mA at 20-mW output power can be realized using the gain levering scheme. >
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