Year-end Sale % OFF 
Abstract
Metalorganic vapor phase epitaxy of GaAs onto ZnSe was studied. To optimize the flow sequence of Ga and As source precursors at the beginning of GaAs growth, they were separately supplied to the ZnSe surfaces at 450–550°C. The Ga precursor dissociates into Ga metal, which deposits three-dimensionally on ZnSe, while the As precursor drastically etches the ZnSe layers. The flow sequence was determined according to these results as not to expose the ZnSe surface to the Ga or As precursors alone for a long time. The growth rate of GaAs on ZnSe is slower than that of a thick GaAs layer at the very initial stage and recovers gradually as the growth continues.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
