Metalorganic molecular beam epitaxy of strained [formula omitted] multi-quantum-wells for 1.3 μm wavelength laser diodes

Abstract

This paper describes the growth of both InAsP single layers and InAsPInGaAsP multi-quantum-well (MQW) structures by metalorganic molecular beam epitaxy (MOMBE). The AsP ratio in the InAsyP1−y films is proportional to the ratio of the AsH3PH3 supply sources. The well-number dependence of the MQWs is characterized by X-ray analysis, photoluminescence (PL), and transmission electron microscopy, revealing that the critical thickness of InAs0.5P0.5 is approximately 70 nm at 520°C. The PL spectrum of an MQW with 8 nm thick InAsP well layers has a full width at half maximum (FWHM) of 4.1 meV at 4 K. The MQW lasers have a threshold current density of 0.74 kA/cm2 with a cavity length of 300 μm. The maximum operating temperature is as high as 145°C for a 10-well MQW laser with cleaved facets.