Abstract
Laser-assisted metalorganic molecular beam epitaxy of γ-−Al 2O 3 on Si substrates was performed. ArF excimer laser light (193 nm) was irradiated on Si substrate surface vertically and horizontally. In vertically irradiated samples, the epitaxial growth temperatures went down from the temperature of 720 °C without laser irradiation to 450 °C. The RHEED pattern of γ-Al 2O 3 with vertical laser irradiation showed sharper and streakier patterns than those without laser irradiation and with horizontal irradiation. By using horizontal laser irradiation, the gas flow rate changed and the growth rate was 1.6 times as high as that without irradiation. These results mean that ArF excimer laser light brings a reaction in vapor phase, and enhances surface migration and surface reaction at the substrate surface.
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