Abstract
The thermal decomposition of dipropylaluminum, dipropylgallium, and dipropylindium chlorides was investigated by thermal analysis. The growth kinetics of oxide films on silicon and gallium arsenide were studied, using dipropylaluminum, dipropylgallium, and dipropylindium chlorides; propylaluminum and propylgallium dichlorides; ethylaluminum dichloride; and diethylaluminum and diethylindium chlorides as metalorganic precursors. The resultant films were characterized by IR and x-ray spectroscopies and electrical measurements.
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