Abstract
The growth kinetics of oxide films on silicon and gallium arsenide substrates were studied, using alkyl and alkoxide metalorganic precursors (triethylantimony, tripropylantimony, antimony butoxide, and antimony tri-β-aminoethoxide). The effect of thermal annealing on the microstructure and properties of the films was examined. Analysis of the deposition kinetics, composition, and properties of the films demonstrates that metalorganic chemical vapor deposition in an oxidizing atmosphere, using antimony butoxide or triethylantimony as a precursor, enables the growth of insulating layers on Si and GaAs at low temperatures (130–300°C).
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